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Microprocessor/Controller Features: High-performance
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SIDR638DP-T1-GE3 MOSFET, N-Ch, 40V, 100A, 150DEG C, 125W Vishay Microprocessor/Controller Features: High-performanceVISHAY SIDR638DP T1 GE3 Power MOSFET, N Channel, 40 V, 100 A, 730 ohm, PowerPAK SO, Surface Mount Transistor Polarity: N Channel Continuous Drain Current Id: 100A Drain Source Voltage Vds: 40V On Resistance Rds(on): 0. 00073ohm Rds(on) Test Voltage Vgs: 10V Threshold Voltage Vgs: 2. 3V Power Dissipation Pd: 125W Transistor Case Style: PowerPAK SO No. of Pins: 8Pins Operating Temperature Max: 150C Product Range: TrenchFET Gen IV Series Automotive
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